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Anotace knihy

Advances in Semiconductor Nanostructures focuses on the physical aspects of semiconductor nanostructures. This includes growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, and helps them in their daily research. Comprehensive reference providing novel physical phenomena and properties of semiconductor nanostructuresCovers the recent developments in the field from all over the worldInternational approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Advances in Semiconductor Nanostructures
• Podnázev: Growth, Characterization, Properties and Applications
• Autor: Alexander Latyshev, Anatoliy Dvurechenskii, Alexander Aseev
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 552
• EAN: 9780128105122
• ISBN: 0128105127
• ID: 13493911
• Nakladatelství: Elsevier Science Publishing Co Inc
• Hmotnost: 1142 g
• Rozměry: 237 × 192 × 30 mm
• Datum vydání: 30. November 2016

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