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Více informací o knize Amorphous and Crystalline Silicon Carbide and Related Materials

• Parametry knihy
• Anotace
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Anotace knihy

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

Parametry knihy

Zařazení knihy Knihy v angličtině Mathematics & science Physics Materials / States of matter

• Plný název: Amorphous and Crystalline Silicon Carbide and Related Materials
• Podnázev: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
• Autor: Gary L. Harris, Cary Y. -W. Yang
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 199
• EAN: 9783642934087
• ISBN: 9783642934087
• ID: 06620106
• Nakladatelství: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Hmotnost: 382 g
• Rozměry: 244 × 170 × 12 mm
• Datum vydání: 19. January 2012

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