Hot Carrier Design Considerations for MOS Devices and Circuits / Nejlevnější knihy
Hot Carrier Design Considerations for MOS Devices and Circuits

Kód: 06616993

Hot Carrier Design Considerations for MOS Devices and Circuits

Autor Cheng Wang

As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconduc ... celý popis

3037


Skladem u dodavatele v malém množství
Odesíláme za 13-16 dnů

Potřebujete více kusů?Máte-li zájem o více kusů, prověřte, prosím, nejprve dostupnost titulu na naši zákaznické podpoře.


Přidat mezi přání

Mohlo by se vám také líbit

Dárkový poukaz: Radost zaručena

Objednat dárkový poukazVíce informací

Více informací o knize Hot Carrier Design Considerations for MOS Devices and Circuits

Nákupem získáte 304 bodů

Anotace knihy

As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Parametry knihy

Zařazení knihy Knihy v angličtině Reference, information & interdisciplinary subjects Interdisciplinary studies

3037

Oblíbené z jiného soudku



Osobní odběr Praha, Brno a 12903 dalších

Copyright ©2008-24 nejlevnejsi-knihy.cz Všechna práva vyhrazenaSoukromíCookies


Můj účet: Přihlásit se
Všechny knihy světa na jednom místě. Navíc za skvělé ceny.

Nákupní košík ( prázdný )

Vyzvednutí v Zásilkovně
zdarma nad 1 499 Kč.

Nacházíte se: